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|
Component Type |
Range |
Parameter Description |
|
BJT |
- |
hFE(DC Current Gain),Ube(Base-Emitter Voltage),Ic(Collector Current), Iceo(Collector Cut-off Current(IB=0)), Ices(Collector short Current), Uf(Forward Voltage of protecting diode) |
|
diode |
forward voltage <4.50V |
Forward voltage drop, junction capacitance, reverse leakage current Ir |
|
double diode |
forward voltage |
|
|
Zener diode |
0.01-4.50V (Transistor Test Area) |
Forward voltage drop, reverse breakdown voltage |
|
0.01-20V (Zener diode test area) |
reverse breakdown voltage |
|
|
MOSFET |
JFET |
Cg(Gate Capacitance), Id(Drain Current)at Vgs(Gate to Source Threshold Voltag),UfForw Voltage of protecting diode) |
|
IGBT |
Drain current Id under Vgs, protection diode forward voltage drop Uf |
|
|
MOSFET |
Turn-on voltage Vt, gate capacitance Cg, drain resistance Rds, protection diode forward voltage drop Uf |
|
|
Thyristor |
Gate trigger current <6mA |
gate turn-on voltage |
|
Triac |
||
|
capacitor |
25pF-100mF |
Capacitance Value, Equivalent Series Resistance ESR, Vloss |
|
Resistor |
0.01-50MΩ |
resistance |
|
Inductor |
0.01mH-20H |
Inductance, DC Resistance |
|
Battery |
0.1-4.5V |
Voltage value, battery polarity |
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